EpiGaN, a leading European supplier of GaN (Gallium Nitride) technology solutions for power switching, RF (radio frequency) and sensor applications, will exhibit and highlight its latest GaN epiwafer developments tailored to 5G applications at the Semicon Taiwan show in Taipeh (Sept 5-7), and at the European Microwave Week in Madrid/Spain (EuMW, Sept 23-28).
EpiGaN, headquartered in Hasselt/Belgium, is a global supplier ofgan-on-siand GaN-on-SiC产品解决方案for next-generation semiconductor technology devices. GaN enables smaller, lighter and higher-performance systems with added functionality for power conversion and sensor applications. Furthermore, GaN is being readied to enable key features of new-standard 5G cellular wireless networks. These future communication systems require exceptionally high-speed connections for multimedia streaming, virtual reality, M2M, or autonomous driving.
Epigan接受了5G挑战，并发布了其HVRF（高压射频）GAN-ON-SI的大型直径版本以及Gan-On-On-Sic晶圆产品系列。客户可以从各种优化的顶级结构中进行选择，以最好地满足其特定的RF设备需求 - Algan，Aln或Inaln屏障与GAN或原位sin Caps结合使用 - 在200mm上的SI基板上，直径为150mm。Epigan的HVRF产品可实现出色的动态行为，MMW频率下的最高功率密度和最低的RF损耗（<0.8dB/mm <0.8dB/mm最高110GHz）。
为了在分配给5G Epigan的30毫米和40 GHz毫米波带中的最终RF性能中，已开发出具有超薄ALN屏障层的HEMT异质结构，并结合了原位罪封盖层。这些结构允许将晶体管的栅极非常接近密度的填充通道定位，从而最大程度地提高了两者之间的静电耦合。这导致了5G MMIC开发所需的RF晶体管特性远远优越。带有晶格匹配的inaln屏障的HEMT结构表现出低于250 ohm/sq的板电阻率，并使最高晶体管电流密度达到最高。
"We are noticing an increasing demand in the market for our RF GaN product solutions optimized for 5G systems,” says EpiGaN co-founder and CEO Dr Marianne Germain. “EpiGaN is proud to offer an exceptionally broad portfolio of RF GaN epiwafer products that enables our global customer base to develop differentiated 5G cellular network solutions with industry-leading performance.“
EpiGaN will exhibit and showcase its latest GaN epiwafer solutions for power switching, RF power and sensor applications together with its local agent APEC at the Semicon Taiwan show (booth J2554) from Sept 5-7, and at the European Microwave Show (booth 354) from Sept 23-28.
Source:https://www.epigan.com/