Lake Shore Cryotronics, a leading innovator in solutions for measurement over a wide range of temperature and magnetic field conditions, announced that it will be exhibiting solutions for high-frequency material characterization at the 39th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sept. 14–19, in Tucson, Ariz. Lake Shore specifically will discuss its fully integrated Model 8501 THz system for material characterization and its work toward developing THz-frequency solutions for cryogenic probe station-based measurement.
Model 8501是一种非接触光谱平台，使研究人员可以更轻松地研究具有共鸣的研究规模的电子和磁性材料。亚博网站下载它使用独特设计的连续波Thz（CW-THZ）发射器和检测器组件，支持在200 GHz至1.5 THz频率下测量的能力，并且光谱分辨率优于500 MHz。
Because the system includes a high-field cryostat and superconducting magnet, material responses can be measured across a range of temperatures and field strengths. These capabilities benefit research of materials at low temperatures at an early stage, when high magnetic fields (up to 9 T) may be required.
Model 8501系统还包括直观的管理和分析软件，可以快速设置测量配置文件，自动测量运行以及收集数据的实时可视化。要查看该软件的演示，IRMMW-THZ的与会者可以在湖岸的展位（＃14）停下来。同样在会议期间，Lake Shore将进行与依赖场和温度依赖的薄膜CW-THZ表征有关的海报会议。本届会议将于9月18日（星期四）下午5:30至7点举行。在南方宴会厅。
Separate from its THz material characterization solution, Lake Shore will also be discussing its most recent efforts toward developing a THz-frequency, on-wafer contact probing solution for cryogenic probe stations. This initiative is a collaboration of Lake Shore with several companies and university researchers. The goal is to enable high-speed device probing and performance measurements at variable temperatures and magnetic fields for next-generation electronics R&D. Conference attendees can learn more about this industry/university collaboration and see a prototype of Lake Shore’s cryogenic THz probe arm assembly by visiting the Lake Shore booth.
The company will also answer questions about its complete line of industry-leading cryogenic probe stations during the conference. These platforms enable non-destructive probing of materials and test devices as a function of temperature and field, whether for the study of electrical, magneto-transport, DC, RF or microwave properties. They are particularly useful for carbon-based nanotube (CNT), graphene, MEMS, gallium-nitride (GaN), silicon-germanium (SiGe), superconducting device and organic semiconductor research.