艾克斯特朗SE今天宣布，日本Azumino的Air Water Inc.报告成功安装了一个全自动AIX G5 HT行星反应器，其配置为8x6英寸，用于生长GaN外延层。
Air Water selected the AIXTRON MOCVD system based on its ability to deliver superior material uniformity, a key factor in demonstrating the advantage of Air Water substrates for GaN epitaxy. Following system installation, the company has announced the release of GaN-on-SiC on silicon substrates for this year, fully exploiting the system’s excellent productivity. In order to address future market demand, Air Water is also considering upgrading the system to an AIXTRON AIX G5+, which can handle up to 5x200 mm (8-inch) silicon substrates.
与传统的硅衬底相比，附加SiC层在GaN初始成核过程中具有保护Si衬底的优点。由于其晶体结构，SiC被认为是GaN生长的理想模板。因此，Si衬底上的SiC能够在大面积上生长出优质晶体质量的GaN层。这一特性为大功率和LED应用带来了效率和成本节约。
Air Water是日本领先的工业气体制造商，在半导体气体业务中开发了用于电力设备和LED应用的碳化硅。在这方面，该公司已经成功地在高达8英寸的硅衬底上生产高质量的3C-SiC(111)，并宣布发布这些产品，用于制造LED和电力电子应用所需的电子设备的GaN外延生长。