使用传输kikuchi衍射作为基于SEM的方法

近来,已经建立了传输kikuchi衍射(TKD)方法,是一种基于SEM的技术,可以提供类似于EBSD的结果,但最大程度地提高了空间分辨率的数量级。

现有的EBSD硬件和软件可以与TKD技术一起使用,但是它需要电子透明样品,例如晶体纳米颗粒,免费的常规膜和Tem Lamella。yabo214

Bruker了解了TKD技术的能力,并将其集成到Quantax EBSD系统中。TKD模式在Quantax EBSD易于使用,并促进各个级别的用户获取高质量数据。布鲁克(Bruker)为Quantax EBSD设计了一个特殊的样品持有人,该样品持有人允许将EDS分析与TKD分析组合。

TKD专业工具包

The TKD Professional Toolkit from Bruker enables coupling TKD analyses with EDS measurements. The key element of this toolkit is the specially designed TKD sample holder, which facilitates handling of any type of thin sample prepared on a TEM grid and allows making measurements even at a working distance of 3mm.

样品支架的夹具设计有助于固定和处理脆弱的样品,例如薄样品。图1和2分别代表其“开放”和“封闭”位置的夹具。它的创新设计允许将TKD/EDS测量组合在一起,没有阴影效果,即使在非常低的样本到探测器距离的操作过程中,也可以防止碰撞风险。

TKD sample holder with open clamp

图1。TKD sample holder with open clamp

带封闭夹的TKD样品支架

图2。带封闭夹的TKD样品支架

TKD校准助手

The pattern center calibration algorithm has been fine-tuned to deliver optimum performance in the TKD geometry, i.e., with the pattern center that have PCy coordinate values nearer to zero or even negative. The pattern center calibration step is completely automatic.

Analysis of Fine-Grained Silicon Layer

The sample used was an ultra fine-grained Si thin film deposited on a glass substrate. The EBSD results were obtained at 7kV EHT using 30nm step size (Figure 3). The TKD results were acquired utilizing a beam acceleration of 30kV and a step size of 11nm (Figure 4). No data cleaning was used in the results. As can be seen from the results, the TKD orientation map has better resolution and quality than the EBSD orientation map.

Standard EBSD orientation map of the Si film

图3。Standard EBSD orientation map of the Si film

TKD orientation map of the same sample

Figure 4.TKD orientation map of the same sample

FSE Images in Transmission Mode

Likewise, a vast resolution improvement can be observed in forescattered electron (FSE) images of a highly deformed pure aluminum sample acquired using theARGUS™ FSE/BSE imaging system.图5显示了许多通过变形过程生成的位错壁网络的晶粒。图6描述了更高的放大图像,其中突出显示了个体位错。

FSE image in transmission mode showing a network of dislocation walls (highlighted)

Figure 5.FSE image in transmission mode showing a network of dislocation walls (highlighted)

在传输模式下获得的FSE图像突出显示了单个位错

Figure 6.在传输模式下获得的FSE图像突出显示了单个位错

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Comments

  1. Hoang Anh Hoang Anh Japan says:

    这是非常好的演示文稿。我想问有关SI电影的观察两个问题。观察Si膜是否需要C-沉积,如图3和4所示。您能否提供有关沉积在玻璃基板上的Si膜样品制备的更多详细信息?

这里表达的意见是作者的观点,不一定反映了AZOM.com的观点和观点。

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